ECE Seminar: Integrating Ultrathin ALD/ALE Films with 1D and 2D Materials to Enable New Device Structures
Tuesday, January 17, 2017
12:00 pm - 1:00 pm
Hudson Hall 207
Dr. Virginia Wheeler, U.S. Naval Research Laboratory
Dr. Wheeler received her BS & PhD in Material Science & Engineering from North Carolina State University in 2005 and 2009, respectively. Her PhD work focused on MOCVD growth of III-Ns, surface cleaning of GaN, and subsequent epitaxial rare earth gate oxide deposition by MBE for GaN MOSFET applications. She began her career at NRL in 2009 as an ASEE postdoctoral fellow in the power electronics group working on reducing defects in SiC epitaxy, as well as epitaxial graphene growth and integration with ALD oxides. She received the Karles Fellowship at NRL in 2012 becoming a full-time government employee in the high power electronics group. Her research interest continue to be in growth, characterization and integration of oxides, 2D & conventional semiconductor materials for device applications, focused on the interfaces between materials which can dominate novel device properties. She is focused on deposition of thin films as protective coatings and added functionality in both planar & more unconventional 3D architecture for advances in electronic and optoelectronic applications. She has over 10 years of experience in various materials growth and characterization techniques. She has published over 60 peer reviewed articles (H index of 12 and over 450 citations) & a book chapter. She was recently a co-author for papers receiving the 36th Japanese Society of Applied Physics Outstanding Paper award and a Berman research publication award, & is a co-inventor on 3 US patents.