Aaron Franklin, Ph.D.

Research Themes

Nanoelectronic Materials & Devices, Sensing & Imaging

Research Interests

Nanomaterials in electronic devices, nanofabrication, printed electronics and internet of things (IoT), biosensing

Bio

Dr. Aaron Franklin is the Addy Distinguished Professor in the Departments of Electrical & Computer Engineering and Chemistry at Duke, where he is also the Associate Dean for Faculty Affairs in the Pratt School of Engineering. Dr. Franklin received his Ph.D. in Electrical Engineering from Purdue University in 2008 and then spent six years on the research staff at the IBM T. J. Watson Research Center in Yorktown Heights, NY.  In 2014, he joined the faculty at Duke where his group explores the use of 1D and 2D nanomaterials for high-performance nanoscale devices, low-cost printed and recyclable electronics, and biomedical sensing systems. He is most widely known for his work on low-dimensional nanoelectronics with specific emphasis on carbon nanotube (CNT) transistors, including device scaling, transport studies, and advanced integration approaches.  In addition to leading a scientific research group, Dr. Franklin has been actively involved in the translation of inventions out of the lab, holding more than 50 issued patents and being engaged in two funded start-ups, one of which was acquired by a Fortune 500 company. He is fellow of the IEEE and NAI and has published more than 100 scientific papers in the field of nanomaterial-based electronics.

Research in the Franklin group is focused on improving the performance and functionality of nanomaterial-enabled electronic devices. The primary drive is to improve performance of - and expand applications for - electronic devices, including those with more custom form factors and/or functionality (e.g., flexibility, transparency, biocompatibility, recyclability). There is an increasing variety of new electronics applications that nanomaterials are uniquely capable of enabling -- the Franklin group works to make such applications possible.

Education

• B.S.E. Arizona State University, 2004
• Ph.D. Purdue University, 2008

Positions

• Addy Professor of Electrical and Computer Engineering
• Professor in the Department of Electrical and Computer Engineering
• Associate Dean for Faculty Affairs
• Professor of Chemistry

Awards, Honors, and Distinctions

• Fellow. IEEE. 2024
• Fellow (NAI). National Academy of Inventors. 2024

Courses Taught

• NANOSCI 511: Foundations of Nanoscale Science and Technology
• ME 392: Undergraduate Projects in Mechanical Engineering
• EGR 790: Special Topics in Engineering
• EGR 393: Research Projects in Engineering
• ECE 899: Special Readings in Electrical Engineering
• ECE 891: Internship
• ECE 590: Advanced Topics in Electrical and Computer Engineering
• ECE 512: Emerging Nanoelectronic Devices
• ECE 511: Foundations of Nanoscale Science and Technology
• ECE 493: Projects in Electrical and Computer Engineering
• ECE 392: Projects in Electrical and Computer Engineering
• ECE 391: Projects in Electrical and Computer Engineering
• ECE 292: Projects in Electrical and Computer Engineering
• ECE 291: Projects in Electrical and Computer Engineering
• ECE 230L: Introduction to Microelectronic Devices and Circuits
• ECE 230L9: Introduction to Microelectronic Devices and Circuits-Lab
• CHEM 611: Foundations of Nanoscale Science and Technology

Publications

• Wu Y, Wang J, Yuan G, Chen Y, Liang K, Yang D, et al. Symmetry Engineering in a 2D Transition Metal Enables Reconfigurable P- and N-Type FETs. Nano letters. 2025 Feb;25(5):1994u20132001.
• Franklin AD. Creating high-performance transistors by coating carbon nanotube arrays: Low-dimensional electronics. Nature Electronics. 2024 Dec 1;7(12):1068u20139.
• Mastrocinque F, Bullard G, Alatis JA, Albro JA, Nayak A, Williams NX, et al. Band gap opening of metallic single-walled carbon nanotubes via noncovalent symmetry breaking. Proceedings of the National Academy of Sciences of the United States of America. 2024 Mar;121(12):e2317078121.
• Smith BN, Ballentine P, Doherty JL, Wence R, Hobbie HA, Williams NX, et al. Aerosol Jet Printing Conductive 3D Microstructures from Graphene Without Post-Processing. Small (Weinheim an der Bergstrasse, Germany). 2024 Mar;20(12):e2305170.
• Albarghouthi FM, Semeniak D, Khanani I, Doherty JL, Smith BN, Salfity M, et al. Addressing Signal Drift and Screening for Detection of Biomarkers with Carbon Nanotube Transistors. ACS nano. 2024 Feb;
• Hobbie HA, Doherty JL, Smith BN, Maccarini P, Franklin AD. Conformal printed electronics on flexible substrates and inflatable catheters using lathe-based aerosol jet printing. Npj flexible electronics. 2024 Jan;8(1):54.
• Rich J, Cole B, Li T, Lu B, Fu H, Smith BN, et al. Aerosol jet printing of surface acoustic wave microfluidic devices. Microsystems & nanoengineering. 2024 Jan;10:2.
• Huegen BL, Doherty JL, Smith BN, Franklin AD. Role of Electrode Configuration and Morphology in Printed Prothrombin Time Sensors. Sensors and actuators B, Chemical. 2024 Jan;399:134785.
• Doherty JL, Zhang Y, Smith BN, Hobbie HA, Kymissis I, Franklin AD. Liquid Crystal Displays with Printed Carbon-Based Recyclable Transistor Backplanes. IEEE Electron Device Letters. 2024 Jan 1;45(12):2427u201330.
• Cheng Z, Backman J, Zhang H, Abuzaid H, Li G, Yu Y, et al. Distinct Contact Scaling Effects in MoS₂ Transistors Revealed with Asymmetrical Contact Measurements. Advanced materials (Deerfield Beach, Fla). 2023 May;35(21):e2210916.
• Lu S, Smith BN, Meikle H, Therien MJ, Franklin AD. All-Carbon Thin-Film Transistors Using Water-Only Printing. Nano letters. 2023 Mar;23(6):2100u20136.
• Lu S, Franklin AD. Nanomaterials in transistors. In: Encyclopedia of Nanomaterials. 2023. p. V1-649-V1-665.
• McDonnell C, Albarghouthi FM, Selhorst R, Kelley-Loughnane N, Franklin AD, Rao R. Aerosol Jet Printed Surface-Enhanced Raman Substrates: Application for High-Sensitivity Detection of Perfluoroalkyl Substances. ACS omega. 2023 Jan;8(1):1597u2013605.
• Franklin AD, Hersam MC, Wong H-SP. Carbon nanotube transistors: Making electronics from molecules. Science (New York, NY). 2022 Nov;378(6621):726u201332.
• Smith BN, Meikle H, Doherty JL, Lu S, Tutoni G, Becker ML, et al. Ionic dielectrics for fully printed carbon nanotube transistors: impact of composition and induced stresses. Nanoscale. 2022 Nov;14(45):16845u201356.
• Albarghouthi FM, Williams NX, Doherty JL, Lu S, Franklin AD. Passivation Strategies for Enhancing Solution-Gated Carbon Nanotube Field-Effect Transistor Biosensing Performance and Stability in Ionic Solutions. ACS applied nano materials. 2022 Oct;5(10):15865u201374.
• Cheng Z, Pang CS, Wang P, Le ST, Wu Y, Shahrjerdi D, et al. Author Correction: How to report and benchmark emerging field-effect transistors (Nature Electronics, (2022), 5, 7, (416-423), 10.1038/s41928-022-00798-8). Nature Electronics. 2022 Sep 1;5(9):620.
• Cheng Z, Pang CS, Wang P, Le ST, Wu Y, Shahrjerdi D, et al. How to report and benchmark emerging field-effect transistors. Nature Electronics. 2022 Jul 1;5(7):416u201323.
• Ye S, Williams NX, Franklin A. Aerosol Jet Printing of SU-8 as a Passivation Layer Against Ionic Solutions. Journal of electronic materials. 2022 Apr;51(4):1583u201390.
• Cheng Z, Zhang H, Le ST, Abuzaid H, Li G, Cao L, et al. Are 2D Interfaces Really Flat? ACS nano. 2022 Apr;16(4):5316u201324.
• Das S, Sebastian A, Pop E, McClellan CJ, Franklin AD, Grasser T, et al. Transistors based on two-dimensional materials for future integrated circuits. Nature Electronics. 2021 Nov 1;4(11):786u201399.
• Abuzaid H, Cheng Z, Li G, Cao L, Franklin AD. Unanticipated polarity shift in edge-contacted tungsten-based 2D transition metal dichalcogenide transistors. IEEE Electron Device Letters. 2021 Oct 1;42(10):1563u20136.
• Shen C, Lu S, Tian Z, Yang S, Cardenas JA, Li J, et al. Electrically Tunable Surface Acoustic Wave Propagation at MHz Frequencies Based on Carbon Nanotube Thin-Film Transistors. Advanced Functional Materials. 2021 May 1;31(18).
• Williams NX, Bullard G, Brooke N, Therien MJ, Franklin AD. Printable and recyclable carbon electronics using crystalline nanocellulose dielectrics. Nature electronics. 2021 Apr;4(4):261u20138.
• Lin YC, Rayner GB, Cardenas J, Franklin AD. Short-channel robustness from negative capacitance in 2D NC-FETs. Applied Physics Letters. 2021 Mar 8;118(10).
• Cardenas JA, Lu S, Williams NX, Doherty JL, Franklin AD. In-Place Printing of Flexible Electrolyte-Gated Carbon Nanotube Transistors with Enhanced Stability. IEEE electron device lettersu202f: a publication of the IEEE Electron Devices Society. 2021 Mar;42(3):367u201370.
• Abuzaid H, Williams NX, Franklin AD. How good are 2D transistors? An application-specific benchmarking study. Applied Physics Letters. 2021 Jan 18;118(3).
• Williams NX, Carroll B, Noyce SG, Hobbie HA, Joh DY, Rogers JG, et al. Fully printed prothrombin time sensor for point-of-care testing. Biosens Bioelectron. 2021 Jan 15;172:112770.
• Karpurapu A, Krekorian A, Tian Y, Collins LM, Karra R, Franklin AD, et al. Evaluating the effect of longitudinal dose and INR data on maintenance warfarin dose predictions. In: BHI 2021 - 2021 IEEE EMBS International Conference on Biomedical and Health Informatics, Proceedings. 2021.
• Cardenas JA, Tsang H, Tong H, Abuzaid H, Price K, Cruz MA, et al. Flash ablation metallization of conductive thermoplastics. Additive Manufacturing. 2020 Dec 1;36.
• Lu S, Franklin AD. Printed carbon nanotube thin-film transistors: progress on printable materials and the path to applications. Nanoscale. 2020 Dec;12(46):23371u201390.
• Noyce SG, Doherty JL, Zauscher S, Franklin AD. Understanding and Mapping Sensitivity in MoS₂ Field-Effect-Transistor-Based Sensors. ACS nano. 2020 Sep;14(9):11637u201347.
• Lu S, Zheng J, Cardenas JA, Williams NX, Lin Y-C, Franklin AD. Uniform and Stable Aerosol Jet Printing of Carbon Nanotube Thin-Film Transistors by Ink Temperature Control. ACS applied materials & interfaces. 2020 Sep;12(38):43083u20139.
• Doherty JL, Noyce SG, Cheng Z, Abuzaid H, Franklin AD. Capping Layers to Improve the Electrical Stress Stability of MoS₂ Transistors. ACS applied materials & interfaces. 2020 Aug;12(31):35698u2013706.
• Coonley KD, Culbert AG, Franklin A. BYOE: Microelectronic non-idealities laboratory explorations. In: ASEE Annual Conference and Exposition, Conference Proceedings. 2020.
• Williams NX, Watson N, Joh DY, Chilkoti A, Franklin AD. Aerosol jet printing of biological inks by ultrasonic delivery. Biofabrication. 2020 Feb;12(2):025004.
• Cardenas JA, Andrews JB, Noyce SG, Franklin AD. Carbon nanotube electronics for IoT sensors. Nano Futures. 2020 Jan 1;4(1).
• Andrews JB, Ballentine P, Cardenas JA, Lim CJ, Williams NX, Summers JB, et al. Printed electronic sensor array for mapping tire tread thickness profiles. IEEE Sensors Journal. 2019 Oct 1;19(19):8913u20139.
• Lu S, Cardenas JA, Worsley R, Williams NX, Andrews JB, Casiraghi C, et al. Flexible, Print-in-Place 1D-2D Thin-Film Transistors Using Aerosol Jet Printing. ACS nano. 2019 Oct;13(10):11263u201372.
• Cheng Z, Yu Y, Singh S, Price K, Noyce SG, Lin Y-C, et al. Immunity to Contact Scaling in MoS₂ Transistors Using in Situ Edge Contacts. Nano letters. 2019 Aug;19(8):5077u201385.
• Williams NX, Noyce S, Cardenas JA, Catenacci M, Wiley BJ, Franklin AD. Silver nanowire inks for direct-write electronic tattoo applications. Nanoscale. 2019 Aug;11(30):14294u2013302.
• Price KM, Najmaei S, Ekuma CE, Burke RA, Dubey M, Franklin AD. Plasma-Enhanced Atomic Layer Deposition of HfO2 on Monolayer, Bilayer, and Trilayer MoS2 for the Integration of High-u03ba Dielectrics in Two-Dimensional Devices. ACS Applied Nano Materials. 2019 Jul 26;2(7):4085u201394.
• Cheng Z, Abuzaid H, Yu Y, Zhang F, Li Y, Noyce SG, et al. Convergent ion beam alteration of 2D materials and metal-2D interfaces. 2D Materials. 2019 Jun 6;6(3).
• Lu S, Cardenas JA, Worsley R, Williams NX, Andrews JB, Casiraghi C, et al. Printing h-BN Gate Dielectric for Flexible, Low-hysteresis Carbon Nanotube Thin-Film Transistors at Low Temperature. In: Device Research Conference - Conference Digest, DRC. 2019. p. 61u20132.
• Cardenas JA, Lu S, Wiliiams NX, Franklin AD. Full In-Place Printing of Flexible Electrolyte-Gated CNT-TFTs. In: Device Research Conference - Conference Digest, DRC. 2019. p. 137u20138.
• Cheng Z, Abuzaid H, Yu Y, Singh S, Cao L, Franklin AD. New Observations in Contact Scaling for 2D FETs. In: Device Research Conference - Conference Digest, DRC. 2019. p. 227u20138.
• Noyce SG, Doherty JL, Cheng Z, Han H, Bowen S, Franklin AD. Electronic Stability of Carbon Nanotube Transistors Under Long-Term Bias Stress. Nano letters. 2019 Mar;19(3):1460u20136.
• Cardenas JA, Upshaw S, Williams NX, Catenacci MJ, Wiley BJ, Franklin AD. Impact of Morphology on Printed Contact Performance in Carbon Nanotube Thin-Film Transistors. Advanced Functional Materials. 2019 Jan 4;29(1).
• Lin YC, McGuire F, Noyce S, Williams N, Cheng Z, Andrews J, et al. Effects of Gate Stack Composition and Thickness in 2-D Negative Capacitance FETs. IEEE Journal of the Electron Devices Society. 2019 Jan 1;7:645u20139.
• Andrews JB, Cardenas JA, Lim CJ, Noyce SG, Mullett J, Franklin AD. Fully Printed and Flexible Carbon Nanotube Transistors for Pressure Sensing in Automobile Tires. IEEE Sensors Journal. 2018 Oct 1;18(19):7875u201380.
• Cheng Z, Price K, Franklin AD. Contacting and Gating 2-D Nanomaterials. IEEE Transactions on Electron Devices. 2018 Oct 1;65(10):4073u201383.
• Cardenas JA, Upshaw S, Catenaccr MJ, Wiley BJ, Franklin AD. Exploring silver contact morphologies in printed carbon nanotube thin-film transistors. In: Device Research Conference - Conference Digest, DRC. 2018.
• Noyce SG, Doherty JL, Franklin AD. Bias stress stability of carbon nanotube transistors with implications for sensors. In: Device Research Conference - Conference Digest, DRC. 2018.
• Andrews JB, Mondal K, Neumann TV, Cardenas JA, Wang J, Parekh DP, et al. Patterned Liquid Metal Contacts for Printed Carbon Nanotube Transistors. ACS nano. 2018 Jun;12(6):5482u20138.
• Najmaei S, Neupane MR, Nichols BM, Burke RA, Mazzoni AL, Chin ML, et al. Cross-Plane Carrier Transport in Van der Waals Layered Materials. Small (Weinheim an der Bergstrasse, Germany). 2018 May;14(20):e1703808.
• Cardenas JA, Catenacci MJ, Andrews JB, Williams NX, Wiley BJ, Franklin AD. In-Place Printing of Carbon Nanotube Transistors at Low Temperature. ACS Applied Nano Materials. 2018 Apr 27;1(4):1863u20139.
• Lin YC, McGuire F, Franklin AD. Realizing ferroelectric Hf0.5Zr0.5O2 with elemental capping layers. Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 2018 Jan 1;36(1).
• Andrews JB, Cardenas JA, Mullett J, Franklin AD. Fully printed and flexible carbon nanotube transistors designed for environmental pressure sensing and aimed at smart tire applications. In: Proceedings of IEEE Sensors. 2017. p. 1u20133.
• Franklin AD, Jena D, Akinwande D. 75 years of the Device Research Conference - A history worth repeating. IEEE Journal of the Electron Devices Society. 2017 Dec 5;6(1):116u201320.
• Liu J, Han Q, Bai Y, Du KZ, Li T, Ji D, et al. Additive engineering for high-performance room-temperature-processed perovskite absorbers with micron-size grains and microsecond-range carrier lifetimes. Energy and Environmental Science. 2017 Nov 1;10(11):2365u201371.
• Catenacci MJ, Flowers PF, Cao C, Andrews JB, Franklin AD, Wiley BJ. Fully printed memristors from Cu-SiO2 core-shell nanowire composites. In: Device Research Conference - Conference Digest, DRC. 2017.
• McGuire FA, Lin YC, Rayner B, Franklin AD. MoS2 negative capacitance FETs with CMOS-compatible hafnium zirconium oxide. In: Device Research Conference - Conference Digest, DRC. 2017.
• Price KM, Franklin AD. Integration of 3.4 nm HfO2 into the gate stack of MOS2 and WSe2 top-gate field-effect transistors. In: Device Research Conference - Conference Digest, DRC. 2017.
• McGuire FA, Lin Y-C, Price K, Rayner GB, Khandelwal S, Salahuddin S, et al. Sustained Sub-60 mV/decade Switching via the Negative Capacitance Effect in MoS₂ Transistors. Nano letters. 2017 Aug;17(8):4801u20136.
• Cheng Z, Price K, Franklin AD. Edge contacts to multilayer MoS2 using in situ Ar ion beam. In: Device Research Conference - Conference Digest, DRC. 2017.
• Franklin AD. Scaling, stacking, and printing: How 1D and 2D nanomaterials still hold promise for a new era of electronics. In: Digest of Technical Papers - Symposium on VLSI Technology. 2017. p. T44u20135.
• Andrews JB, Cao C, Brooke MA, Franklin AD. Noninvasive material thickness detection by aerosol jet printed sensors enhanced through metallic carbon nanotube ink. IEEE Sensors Journal. 2017 Jul 15;17(14):4612u20138.
• Price KM, Schauble KE, McGuire FA, Farmer DB, Franklin AD. Uniform Growth of Sub-5-Nanometer High-u03ba Dielectrics on MoS₂ Using Plasma-Enhanced Atomic Layer Deposition. ACS applied materials & interfaces. 2017 Jul;9(27):23072u201380.
• Catenacci MJ, Flowers PF, Cao C, Andrews JB, Franklin AD, Wiley BJ. Fully Printed Memristors from Cuu2013SiO2 Coreu2013Shell Nanowire Composites. Journal of Electronic Materials. 2017 Jul 1;46(7):4596u2013603.
• Cao C, Andrews JB, Franklin AD. Completely Printed, Flexible, Stable, and Hysteresis-Free Carbon Nanotube Thin-Film Transistors via Aerosol Jet Printing. Advanced Electronic Materials. 2017 May 1;3(5).
• Cox ND, Cress CD, Rossi JE, Puchades I, Merrill A, Franklin AD, et al. Modification of Silver/Single-Wall Carbon Nanotube Electrical Contact Interfaces via Ion Irradiation. ACS applied materials & interfaces. 2017 Mar;9(8):7406u201311.
• Joh DY, McGuire F, Abedini-Nassab R, Andrews JB, Achar RK, Zimmers Z, et al. Poly(oligo(ethylene glycol) methyl ether methacrylate) Brushes on High-u03ba Metal Oxide Dielectric Surfaces for Bioelectrical Environments. ACS applied materials & interfaces. 2017 Feb;9(6):5522u20139.
• Najmaei S, Lei S, Burke RA, Nichols BM, George A, Ajayan PM, et al. Enabling Ultrasensitive Photo-detection Through Control of Interface Properties in Molybdenum Disulfide Atomic Layers. Scientific reports. 2016 Dec;6:39465.
• Cheng Z, Cardenas JA, McGuire F, Najmaei S, Franklin AD. Modifying the Ni-MoS2 Contact Interface Using a Broad-Beam Ion Source. IEEE Electron Device Letters. 2016 Sep 1;37(9):1234u20137.
• McGuire FA, Cheng Z, Price K, Franklin AD. Sub-60 mV/decade switching in 2D negative capacitance field-effect transistors with integrated ferroelectric polymer. Applied Physics Letters. 2016 Aug 29;109(9).
• Cheng Z, Cardenas JA, McGuire F, Franklin AD. Using Ar Ion beam exposure to improve contact resistance in MoS2 FETs. In: Device Research Conference - Conference Digest, DRC. 2016.
• Cao C, Andrews JB, Kumar A, Franklin AD. Improving Contact Interfaces in Fully Printed Carbon Nanotube Thin-Film Transistors. ACS nano. 2016 May;10(5):5221u20139.
• Cao Q, Han SJ, Tersoff J, Franklin AD, Zhu Y, Zhang Z, et al. End-bonded contacts for carbon nanotube transistors with low, size-independent resistance. Science. 2015 Oct 2;350(6256):68u201372.
• Li J, Franklin AD, Liu J. Gate-Free Electrical Breakdown of Metallic Pathways in Single-Walled Carbon Nanotube Crossbar Networks. Nano letters. 2015 Sep;15(9):6058u201365.
• Lee CS, Pop E, Franklin AD, Haensch W, Wong HSP. A compact virtual-source model for carbon nanotube FETs in the sub-10-nm regime - Part II: Extrinsic elements, performance assessment, and design optimization. IEEE Transactions on Electron Devices. 2015 Sep 1;62(9):3070u20138.
• Lee CS, Pop E, Franklin AD, Haensch W, Wong HSP. A Compact Virtual-Source Model for Carbon Nanotube FETs in the Sub-10-nm Regime-Part I: Intrinsic Elements. IEEE Transactions on Electron Devices. 2015 Sep 1;62(9):3061u20139.
• Franklin AD. DEVICE TECHNOLOGY. Nanomaterials in transistors: From high-performance to thin-film applications. Science (New York, NY). 2015 Aug;349(6249):aab2750.
• Franklin AD. Carbon Nanotube Electronics. In: Emerging Nanoelectronic Devices. 2015. p. 315u201335.
• Tulevski GS, Franklin AD, Frank D, Lobez JM, Cao Q, Park H, et al. Toward high-performance digital logic technology with carbon nanotubes. ACS Nano. 2014 Sep 23;8(9):8730u201345.
• Kim B, Franklin A, Nuckolls C, Haensch W, Tulevski GS. Achieving low-voltage thin-film transistors using carbon nanotubes. Applied Physics Letters. 2014 Aug 11;105(6).
• Franklin AD, Farmer DB, Haensch W. Defining and overcoming the contact resistance challenge in scaled carbon nanotube transistors. ACS nano. 2014 Jul;8(7):7333u20139.
• Franklin AD, Haensch W. Defining and overcoming the contact resistance challenge in scaled carbon nanotube transistors. In: Device Research Conference - Conference Digest, DRC. 2014. p. 191u20132.
• Shahrjerdi D, Franklin AD, Oida S, Ott JA, Tulevski GS, Haensch W. High-performance air-stable n-type carbon nanotube transistors with erbium contacts. ACS Nano. 2013 Sep 24;7(9):8303u20138.
• Franklin AD. Electronics: The road to carbon nanotube transistors. Nature. 2013 Jul 8;498(7455):443u20134.
• Franklin AD, Koswatta SO, Farmer DB, Smith JT, Gignac L, Breslin CM, et al. Carbon nanotube complementary wrap-gate transistors. Nano Letters. 2013 Jun 12;13(6):2490u20135.
• Luo J, Wei L, Lee CS, Franklin AD, Guan X, Pop E, et al. Compact model for carbon nanotube field-effect transistors including nonidealities and calibrated with experimental data down to 9-nm gate length. IEEE Transactions on Electron Devices. 2013 May 15;60(6):1834u201343.
• Smith JT, Franklin AD, Farmer DB, Dimitrakopoulos CD. Reducing contact resistance in graphene devices through contact area patterning. ACS nano. 2013 Apr;7(4):3661u20137.
• Tulevski GS, Franklin AD, Afzali A. High purity isolation and quantification of semiconducting carbon nanotubes via column chromatography. ACS nano. 2013 Apr;7(4):2971u20136.
• Franklin AD, Oida S, Farmer DB, Smith JT, Han SJ, Breslin CM, et al. Stacking graphene channels in parallel for enhanced performance with the same footprint. IEEE Electron Device Letters. 2013 Feb 22;34(4):556u20138.
• Franklin AD, Bojarczuk NA, Copel M. Consistently low subthreshold swing in carbon nanotube transistors using lanthanum oxide. Applied Physics Letters. 2013 Jan 7;102(1).
• Franklin AD, Koswatta SO, Farmer D, Tulevski GS, Smith JT, Miyazoe H, et al. Scalable and fully self-aligned n-type carbon nanotube transistors with gate-all-around. In: Technical Digest - International Electron Devices Meeting, IEDM. 2012.
• Cao Q, Han SJ, Tulevski GS, Franklin AD, Haensch W. Evaluation of field-effect mobility and contact resistance of transistors that use solution-processed single-walled carbon nanotubes. ACS Nano. 2012 Jul 24;6(7):6471u20137.
• Han S-J, Reddy D, Carpenter GD, Franklin AD, Jenkins KA. Current saturation in submicrometer graphene transistors with thin gate dielectric: experiment, simulation, and theory. ACS nano. 2012 Jun;6(6):5220u20136.
• Franklin AD, Tulevski GS, Han SJ, Shahrjerdi D, Cao Q, Chen HY, et al. Variability in carbon nanotube transistors: Improving device-to-device consistency. ACS Nano. 2012 Feb 28;6(2):1109u201315.
• Franklin AD, Luisier M, Han S-J, Tulevski G, Breslin CM, Gignac L, et al. Sub-10 nm carbon nanotube transistor. Nano letters. 2012 Feb;12(2):758u201362.
• Franklin AD, Han SJ, Bol AA, Perebeinos V. Double contacts for improved performance of graphene transistors. IEEE Electron Device Letters. 2012 Jan 1;33(1):17u20139.
• Park H, Afzali A, Han SJ, Tulevski GS, Franklin AD, Tersoff J, et al. High-density integration of carbon nanotubes via chemical self-assembly. Nature Nanotechnology. 2012 Jan 1;7(12):787u201391.
• Franklin AD, Han SJ, Tulevski GS, Luisier M, Breslin CM, Gignac L, et al. Sub-10 nm carbon nanotube transistor. In: Technical Digest - International Electron Devices Meeting, IEDM. 2011.
• Han SJ, Valdes-Garcia A, Bol AA, Franklin AD, Farmer D, Kratschmer E, et al. Graphene technology with inverted-T gate and RF passives on 200 mm platform. In: Technical Digest - International Electron Devices Meeting, IEDM. 2011.
• Shahrjerdi D, Franklin AD, Oida S, Tulevski GS, Han SJ, Hannon JB, et al. High device yield carbon nanotube NFETs for high-performance logic applications. In: Technical Digest - International Electron Devices Meeting, IEDM. 2011.
• Han SJ, Jenkins KA, Valdes Garcia A, Franklin AD, Bol AA, Haensch W. High-frequency graphene voltage amplifier. Nano Letters. 2011 Sep 14;11(9):3690u20133.
• Franklin AD, Han SJ, Bol AA, Haensch W. Effects of nanoscale contacts to graphene. IEEE Electron Device Letters. 2011 Aug 1;32(8):1035u20137.
• Han SJ, Chang J, Franklin AD, Bol AA, Loesing R, Guo D, et al. Wafer scale fabrication of carbon nanotube FETs with embedded poly-gates. In: Technical Digest - International Electron Devices Meeting, IEDM. 2010.
• Franklin AD, Bol AA, Chen Z. Channel and contact length scaling in carbon nanotube transistors. In: Device Research Conference - Conference Digest, DRC. 2010. p. 275u20136.
• Franklin AD, Lin A, Wong HSP, Chen Z. Current scaling in aligned carbon nanotube array transistors with local bottom gating. IEEE Electron Device Letters. 2010 Jul 1;31(7):644u20136.
• Sayer RA, Kim S, Franklin AD, Mohammadi S, Fisher TS. Shot noise thermometry for thermal characterization of templated carbon nanotubes. IEEE Transactions on Components and Packaging Technologies. 2010 Mar 1;33(1):178u201383.
• Westover TL, Franklin AD, Cola BA, Fisher TS, Reifenberger RG. Photo- and thermionic emission from potassium-intercalated carbon nanotube arrays. Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 2010 Jan 1;28(2):423u201334.
• Franklin AD, Chen Z. Length scaling of carbon nanotube transistors. Nature Nanotechnology. 2010 Jan 1;5(12):858u201362.
• Franklin AD, Tulevski G, Hannon JB, Chen Z. Can carbon nanotube transistors be scaled without performance degradation? In: Technical Digest - International Electron Devices Meeting, IEDM. 2009.
• Westover TL, Fisher TS, Franklin AD, Reifenberger RG. Photo-and thermionic emission from potassium-intercalated single-walled carbon nanotube arrays. In: 2008 Proceedings of 3rd Energy Nanotechnology International Conference, ENIC 2008. 2009. p. 1u201310.
• Franklin AD, Sayer RA, Sands TD, Janes DB, Fisher TS. Vertical carbon nanotube devices with nanoscale lengths controlled without lithography. IEEE Transactions on Nanotechnology. 2009 Jul 1;8(4):469u201376.
• Franklin AD, Sayer RA, Sands TD, Fisher TS, Janes DB. Toward surround gates on vertical single-walled carbon nanotube devices. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2009 Apr 20;27(2):821u20136.
• Claussen JC, Franklin AD, Ul Haque A, Porterfield DM, Fisher TS. Electrochemical biosensor of nanocube-augmented carbon nanotube networks. ACS nano. 2009 Jan;3(1):37u201344.
• Voggu R, Rout CS, Franklin AD, Fisher TS, Rao CNR. Extraordinary sensitivity of the electronic structure and properties of single-walled carbon nanotubes to molecular charge-transfer. Journal of Physical Chemistry C. 2008 Aug 28;112(34):13053u20136.
• Smith JT, Hang Q, Franklin AD, Janes DB, Sands TD. Highly ordered diamond and hybrid triangle-diamond patterns in porous anodic alumina thin films. Applied Physics Letters. 2008 Aug 15;93(4).
• Franklin AD, Janes DB, Claussen JC, Fisher TS, Sands TD. Independently addressable fields of porous anodic alumina embedded in Si O2 on Si. Applied Physics Letters. 2008 Jan 16;92(1).
• Maschmann MR, Franklin AD, Sands TD, Fisher TS. Optimization of carbon nanotube synthesis from porous anodic Al-Fe-Al templates. Carbon. 2007 Oct 1;45(11):2290u20136.
• Franklin AD, Smith JT, Sands T, Fisher TS, Choi KS, Janes DB. Controlled decoration of single-walled carbon nanotubes with Pd nanocubes. Journal of Physical Chemistry C. 2007 Sep 20;111(37):13756u201362.
• Franklin AD, Maschmann MR, DaSilva M, Janes DB, Fisher TS, Sands TD. In-place fabrication of nanowire electrode arrays for vertical nanoelectronics on Si substrates. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2007 Apr 8;25(2):343u20137.
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• Maschmann MR, Franklin AD, Amama PB, Zakharov DN, Stach EA, Sands TD, et al. Vertical single- and double-walled carbon nanotubes grown from modified porous anodic alumina templates. Nanotechnology. 2006 Aug 14;17(15):3925u20139.

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