Tania Roy, Ph.D.

Research Themes

Nanoelectronic Materials & Devices, Sensing & Imaging

Research Interests

Energy-efficient electronics
Two-dimensional materials
Neuromorphic Computing
Optoelectronics
Wide bandgap materials
High power electronics
Radiation effects and reliability

Bio

Roy's work focuses on developing hardware for artificial intelligence applications using novel functional materials including two-dimensional materials. By modeling computer architecture after the basic structure of synapses and neurons, hardware can be manufactured to be better adapted to pattern recognition algorithms. She also focuses on high-power electronics made with gallium nitride and other wide bandgap semiconductors. She is currently working on investigating the defects produced by ionizing radiation in GaN devices. She is particularly interested in studying the reliability of emerging devices and materials systems using electrical characterization techniques.

Education

• M.S. Vanderbilt University, 2008
• Ph.D. Vanderbilt University, 2011

Trainings & Certifications

• Postdoctoral Fellow, Georgia Institute of Technology 2011 - 2013 (2011 - 2013) Georgia Institute of Technology
• Postdoctoral Scholar, University of California, Berkeley 2014 - 2016 (2014 - 2016) University of California, Berkeley

Positions

• Associate Professor of Electrical and Computer Engineering

Awards, Honors, and Distinctions

• Presidential Early Career Awards for Scientists and Engineers (PECASE). National Science Foundation (NSF). 2024

Publications

• Ko TJ, Li H, Mofid SA, Yoo C, Okogbue E, Han SS, et al. Erratum: Two-Dimensional Near-Atom-Thickness Materials for Emerging Neuromorphic Devices and Applications (iScience (2020) 23(11), (S2589004220308683), (10.1016/j.isci.2020.101676)). Iscience. 2025 Apr 18;28(4).
• Chen J, Sarkar A, Rahman MS, Ravel V, Franklin AD, Roy T. Robust Memcapacitive Synapse Array for Energy-Efficient Motion Detection. ACS nano. 2025 Apr;19(16):15974u201382.
• Han SS, Shawkat MS, Yoo C, Lee CW, Cao J, Lee JH, et al. Centimeter-Scale Ultrathin Platinum Monosulfide Films with Large Negative Temperature Coefficient of Resistance for Deformable Visible-to-Mid-Infrared Photodetectors. ACS applied materials & interfaces. 2025 Mar;17(10):15764u201374.
• Rahman MS, Sarkar A, Silva DRD, Harrison AT, Kuo YH, Chen J, et al. Accurate Bias Stress Instability Measurements in High-Performance ITO FETs Using Modified On-the-Fly Technique. IEEE Electron Device Letters. 2025 Jan 1;46(5):864u20137.
• Islam MM, Rahman MS, Heldmyer H, Han SS, Jung Y, Roy T. Bio-inspired u201cSelf-denoisingu201d capability of 2D materials incorporated optoelectronic synaptic array. Npj 2d Materials and Applications. 2024 Dec 1;8(1).
• Roy T. A 2D route to 3D computer chips. Nature. 2024 Jan;625(7994):249u201350.
• Krishnaprasad A, Dev D, Shawkat MS, Martinez-Martinez R, Islam MM, Chung HS, et al. Graphene/MoS2/SiOx memristive synapses for linear weight update. Npj 2d Materials and Applications. 2023 Dec 1;7(1).
• Yoo C, Ko TJ, Kaium MG, Martinez R, Islam MM, Li H, et al. A minireview on 2D materials-enabled optoelectronic artificial synaptic devices. APL Materials. 2022 Jul 1;10(7).
• Islam MM, Krishnaprasad A, Dev D, Martinez-Martinez R, Okonkwo V, Wu B, et al. Multiwavelength Optoelectronic Synapse with 2D Materials for Mixed-Color Pattern Recognition. ACS nano. 2022 Jul;16(7):10188u201398.
• Martinez-Martinez R, Islam MM, Krishnaprasad A, Roy T. Graphene-oxide interface for optoelectronic synapse application. Scientific reports. 2022 Apr;12(1):5880.
• Krishnaprasad A, Dev D, Han SS, Shen Y, Chung H-S, Bae T-S, et al. MoS₂ Synapses with Ultra-low Variability and Their Implementation in Boolean Logic. ACS nano. 2022 Feb;16(2):2866u201376.
• Park J, Kravchuk P, Krishnaprasad A, Roy T, Kang EH. Graphene Enhances Actin Filament Assembly Kinetics and Modulates NIH-3T3 Fibroblast Cell Spreading. International journal of molecular sciences. 2022 Jan;23(1):509.
• Aina L, Hahn C, Wallace C, Islam MM, Okonkwo V, Roy T. The Artificial Intelligent Pixel (aiPixel). In: Proceedings of SPIE the International Society for Optical Engineering. 2022.
• Reddy LH, Pande SR, Roy T, Vogel EM, Chakravorty A, Chakrabarti B. A SPICE compact model for forming-free, low-power graphene-insulator-graphene ReRAM technology. Emergent Materials. 2021 Aug 1;4(4):1055u201365.
• Ganesan JP, Dev D, Krishnaprasad A, Feit C, Moser D, Kanjolia RK, et al. Semiconductor-to-metal transition in atomic layer deposition (ALD) of VO2 films using VCl4 and water. Applied Physics Letters. 2021 Jun 28;118(26).
• Shawkat MS, Hafiz SB, Islam MM, Mofid SA, Al Mahfuz MM, Biswas A, et al. Scalable Van der Waals Two-Dimensional PtTe₂ Layers Integrated onto Silicon for Efficient Near-to-Mid Infrared Photodetection. ACS applied materials & interfaces. 2021 Apr;13(13):15542u201350.
• Das S, Roy T. CHAPTER 12: Ambipolar Inorganic Two-dimensional Materials for Solar Cells. In: Rsc Smart Materials. 2021. p. 256u201397.
• Li J, Dwivedi P, Kumar KS, Roy T, Crawford KE, Thomas J. Growing Perovskite Quantum Dots on Carbon Nanotubes for Neuromorphic Optoelectronic Computing. Advanced Electronic Materials. 2021 Jan 1;7(1).
• Islam MM, Dev D, Krishnaprasad A, Tetard L, Roy T. Optoelectronic synapse using monolayer MoS₂ field effect transistors. Scientific reports. 2020 Dec;10(1):21870.
• Ko TJ, Li H, Mofid SA, Yoo C, Okogbue E, Han SS, et al. Two-Dimensional Near-Atom-Thickness Materials for Emerging Neuromorphic Devices and Applications. Iscience. 2020 Nov 20;23(11).
• Dev D, Shawkat MS, Krishnaprasad A, Jung Y, Roy T. Artificial Nociceptor Using 2D MoS2Threshold Switching Memristor. IEEE Electron Device Letters. 2020 Sep 1;41(9):1440u20133.
• Dev D, Krishnaprasad A, Shawkat MS, He Z, Das S, Fan D, et al. 2D MoS2-Based Threshold Switching Memristor for Artificial Neuron. IEEE Electron Device Letters. 2020 Jun 1;41(6):936u20139.
• Shawkat MS, Gil J, Han SS, Ko T-J, Wang M, Dev D, et al. Thickness-Independent Semiconducting-to-Metallic Conversion in Wafer-Scale Two-Dimensional PtSe₂ Layers by Plasma-Driven Chalcogen Defect Engineering. ACS applied materials & interfaces. 2020 Mar;12(12):14341u201351.
• Pradhan B, Das S, Li J, Chowdhury F, Cherusseri J, Pandey D, et al. Ultrasensitive and ultrathin phototransistors and photonic synapses using perovskite quantum dots grown from graphene lattice. Science advances. 2020 Feb;6(7):eaay5225.
• Krishnaprasad A, Choudhary N, Das S, Dev D, Kalita H, Chung HS, et al. Electronic synapses with near-linear weight update using MoS2/graphene memristors. Applied Physics Letters. 2019 Sep 2;115(10).
• Wang P, Kalita H, Krishnaprasad A, Dev D, Ou2019hara A, Jiang R, et al. Total-Ionizing-Dose Response of MoS2 Transistors With ZrO2 and h-BN Gate Dielectrics. IEEE Transactions on Nuclear Science. 2019 Jul 1;66(7):1584u201391.
• Shawkat MS, Chung H-S, Dev D, Das S, Roy T, Jung Y. Two-Dimensional/Three-Dimensional Schottky Junction Photovoltaic Devices Realized by the Direct CVD Growth of vdW 2D PtSe₂ Layers on Silicon. ACS applied materials & interfaces. 2019 Jul;11(30):27251u20138.
• Krishnaprasad A, Das S, Choudhary N, Dev D, Chung HS, Aina O, et al. Linear Weight Update in MoS/Graphene Memristive Synapses for Unsupervised Learning. In: Device Research Conference Conference Digest Drc. 2019. p. 79u201380.
• Dev D, Krishnaprasad A, He Z, Das S, Shawkat MS, Manley M, et al. Artificial Neuron using Ag/2D-MoS/Au Threshold Switching Memristor. In: Device Research Conference Conference Digest Drc. 2019. p. 193u20134.
• Roy T. Scaled dielectrics for scaled devices. Nature Electronics. 2019 Jun 1;2(6):213u20134.
• Cherusseri J, Sambath Kumar K, Choudhary N, Nagaiah N, Jung Y, Roy T, et al. Novel mesoporous electrode materials for symmetric, asymmetric and hybrid supercapacitors. Nanotechnology. 2019 May;30(20):202001.
• Das S, Hossain MJ, Leung SF, Lenox A, Jung Y, Davis K, et al. A leaf-inspired photon management scheme using optically tuned bilayer nanoparticles for ultra-thin and highly efficient photovoltaic devices. Nano Energy. 2019 Apr 1;58:47u201356.
• Das S, Pandey D, Thomas J, Roy T. The Role of Graphene and Other 2D Materials in Solar Photovoltaics. Advanced materials (Deerfield Beach, Fla). 2019 Jan;31(1):e1802722.
• Kalita H, Krishnaprasad A, Choudhary N, Das S, Dev D, Ding Y, et al. Artificial Neuron using Vertical MoS₂/Graphene Threshold Switching Memristors. Scientific reports. 2019 Jan;9(1):53.
• Withanage SS, Kalita H, Chung H-S, Roy T, Jung Y, Khondaker SI. Uniform Vapor-Pressure-Based Chemical Vapor Deposition Growth of MoS₂ Using MoO₃ Thin Film as a Precursor for Coevaporation. ACS omega. 2018 Dec;3(12):18943u20139.
• Okogbue E, Kim JH, Ko T-J, Chung H-S, Krishnaprasad A, Flores JC, et al. Centimeter-Scale Periodically Corrugated Few-Layer 2D MoS₂ with Tensile Stretch-Driven Tunable Multifunctionalities. ACS applied materials & interfaces. 2018 Sep;10(36):30623u201330.
• Kalita H, Krishnaprasad A, Choudhary N, Das S, Chung HS, Jung Y, et al. Artificial Neuron using MoS2/graphene threshold switching memristors. In: Device Research Conference Conference Digest Drc. 2018.
• Dev D, Krishnaprasad A, Kalita H, Das S, Rodriguez V, Calderon Flores J, et al. High quality gate dielectric/MoS2 interfaces probed by the conductance method. Applied Physics Letters. 2018 Jun 4;112(23).
• Islam MA, Kim JH, Schropp A, Kalita H, Choudhary N, Weitzman D, et al. Centimeter-Scale 2D van der Waals Vertical Heterostructures Integrated on Deformable Substrates Enabled by Gold Sacrificial Layer-Assisted Growth. Nano letters. 2017 Oct;17(10):6157u201365.
• Tosun M, Chan L, Amani M, Roy T, Ahn GH, Taheri P, et al. Air-Stable n-Doping of WSe2 by Anion Vacancy Formation with Mild Plasma Treatment. ACS Nano. 2016 Jul 26;10(7):6853u201360.
• Roy T, Tosun M, Hettick M, Ahn GH, Hu C, Javey A. 2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures. Applied Physics Letters. 2016 Feb 22;108(8).
• Roy T, Tosun M, Cao X, Fang H, Lien DH, Zhao P, et al. Dual-gated MoS2/WSe2van der Waals tunnel diodes and transistors. ACS Nano. 2015 Feb 24;9(2):2071u20139.
• Zhao P, Desai S, Tosun M, Roy T, Fang H, Sachid A, et al. 2D layered materials: From materials properties to device applications. In: Technical Digest International Electron Devices Meeting Iedm. 2015. p. 27.3.1-27.3.4.
• Lien DH, Kang JS, Amani M, Chen K, Tosun M, Wang HP, et al. Engineering light outcoupling in 2D materials. Nano Letters. 2015 Feb 11;15(2):1356u201361.
• Roy T, Tosun M, Kang JS, Sachid AB, Desai SB, Hettick M, et al. Field-effect transistors built from all two-dimensional material components. ACS Nano. 2014 Jun 24;8(6):6259u201364.
• Joiner CA, Roy T, Hesabi ZR, Chakrabarti B, Vogel EM. Cleaning graphene with a titanium sacrificial layer. Applied Physics Letters. 2014 Jun 2;104(22).
• Roy T, Liu L, De La Barrera S, Chakrabarti B, Hesabi ZR, Joiner CA, et al. Tunneling characteristics in chemical vapor deposited graphene-hexagonal boron nitride-graphene junctions. Applied Physics Letters. 2014 Mar 24;104(12).
• Puzyrev Y, Mukherjee S, Chen J, Roy T, Silvestri M, Schrimpf RD, et al. Gate bias dependence of defect-mediated hot-carrier degradation in GaN HEMTs. IEEE Transactions on Electron Devices. 2014 Jan 1;61(5):1316u201320.
• Chakrabarti B, Roy T, Vogel EM. Nonlinear switching with ultralow reset power in graphene-insulator- graphene forming-free resistive memories. IEEE Electron Device Letters. 2014 Jan 1;35(7):750u20132.
• Chakrabarti B, Roy T, Joiner CA, Hesabi ZR, Vogel EM. Forming-free resistive switching with low current operation in graphene-insulator-graphene structures. In: Device Research Conference Conference Digest Drc. 2013. p. 55u20136.
• Roy T, Joiner C, Razavi Z, Vogel EM. Integration and characterization of graphene-insulator-graphene junctions. In: Ecs Transactions. 2013. p. 63u20139.
• Zhang CX, Shen X, Zhang EX, Fleetwood DM, Schrimpf RD, Francis SA, et al. Temperature dependence and postirradiation annealing response of the 1/f noise of 4H-SiC MOSFETs. IEEE Transactions on Electron Devices. 2013 Jul 15;60(7):2361u20137.
• Roy T, Hesabi ZR, Joiner CA, Fujimoto A, Vogel EM. Barrier engineering for double layer CVD graphene tunnel FETs. Microelectronic Engineering. 2013 May 1;109:117u20139.
• Fleetwood DM, Roy T, Shen X, Puzyrev YS, Zhang EX, Schrimpf RD, et al. Oxygen-related border traps in MOS and GaN devices. In: Icsict 2012 2012 IEEE 11th International Conference on Solid State and Integrated Circuit Technology Proceedings. 2012.
• Pantelides ST, Puzyrev Y, Shen X, Roy T, Dasgupta S, Tuttle BR, et al. Reliability of III-V devices - The defects that cause the trouble. In: Microelectronic Engineering. 2012. p. 3u20138.
• Warnick KH, Puzyrev Y, Roy T, Fleetwood DM, Schrimpf RD, Pantelides ST. Room-temperature diffusive phenomena in semiconductors: The case of AlGaN. Physical Review B Condensed Matter and Materials Physics. 2011 Dec 20;84(21).
• Puzyrev YS, Roy T, Zhang EX, Fleetwood DM, Schrimpf RD, Pantelides ST. Radiation-induced defect evolution and electrical degradation of AlGaN/GaN high-electron-mobility transistors. In: IEEE Transactions on Nuclear Science. 2011. p. 2918u201324.
• Roy T, Zhang EX, Puzyrev YS, Shen X, Fleetwood DM, Schrimpf RD, et al. Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors. Applied Physics Letters. 2011 Nov 14;99(20).
• Roy T, Zhang EX, Fleetwood DM, Schrimpf RD, Puzyrev YS, Pantelides ST. Reliability-limiting defects in AlGaN/GaN HEMTs. In: IEEE International Reliability Physics Symposium Proceedings. 2011. p. 4E.4.4.
• Roy T, Puzyrev YS, Zhang EX, Dasgupta S, Francis SA, Fleetwood DM, et al. 1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH3-rich conditions. In: Microelectronics Reliability. 2011. p. 212u20136.
• Puzyrev YS, Roy T, Beck M, Tuttle BR, Schrimpf RD, Fleetwood DM, et al. Dehydrogenation of defects and hot-electron degradation in GaN high-electron-mobility transistors. Journal of Applied Physics. 2011 Feb 1;109(3).
• Roy T, Zhang EX, Puzyrev YS, Fleetwood DM, Schrimpf RD, Choi BK, et al. Process dependence of proton-induced degradation in GaN HEMTs. In: IEEE Transactions on Nuclear Science. 2010. p. 3060u20135.
• Roy T, Puzyrev YS, Tuttle BR, Fleetwood DM, Schrimpf RD, Brown DF, et al. Electrical-stress-induced degradation in AlGaN/GaN high electron mobility transistors grown under gallium-rich, nitrogen-rich, and ammonia-rich conditions. Applied Physics Letters. 2010 Apr 12;96(13).
• Roy T, Witulski AF, Schrimpf RD, Alles ML, Massengill LW. Single event mechanisms in 90 nm triple-well CMOS devices. In: IEEE Transactions on Nuclear Science. 2008. p. 2948u201356.