Hisham Z. Massoud

Research Interests

Ultrathin gate dielectrics for CMOS ULSI – the technology, physics, modeling, simulation, and characterization of ultrathin-oxide MOSFETs

Bio

Hisham Z. Massoud joined the Duke ECE Department in 1983, where is now a Professor. He is the founding director of the Semiconductor Research Laboratory. Professor Massoud has been a research scientist at the IBM Thomas J. Watson Research Center, Yorktown Heights, N.Y., in 1977 and 1980-81, the Microelectronics Center of North Carolina in 1987, the Hewlett-Packard Integrated Circuits Business Division in 1992, and the Max-Planck Institute for Microstructure Physics in 1997 and 1998. He was a visiting professor of ECE at King Abdullah University of Science and Technology (KAUST) in Saudi Arabia in 2012. He is a Life Fellow of the Institute of Electrical and Electronics Engineers and Lifetime Fellow of the Electrochemical Society. He was awarded the 2006 Electronics and Photonics Division Award of the Electrochemical Society (ECS) for his work on ultrathin MOS gate dielectric films.

Education

• B.S. Cairo University (Egypt), 1973
• M.S. Cairo University (Egypt), 1975
• M.S. Stanford University, 1976
• Ph.D. Stanford University, 1983

Positions

• Professor of Electrical and Computer Engineering

Awards, Honors, and Distinctions

• Life Fellow. Institute for Electrical and Electronics Engineers. 2015
• Electronics and Photonics Division Award. Electrochemical Society. 2006
• Fellow. Electrochemical Society. 2006
• Inventor Recognition Award. Semiconductor Research Corporation. 2005

Courses Taught

• ECE 529: Digital Integrated Circuits
• ECE 526: Semiconductor Devices for Integrated Circuits
• ECE 330L: Fundamentals of Microelectronic Devices
• ECE 230L: Introduction to Microelectronic Devices and Circuits
• ECE 110L: Fundamentals of Electrical and Computer Engineering
• ECE 110L9: Fundamentals of Electrical and Computer Engineering - Lab

Publications

• Ybarra GA, Collins LM, Huettel LG, Coonley KD, Massoud HZ, Board JA, et al. Integrated sensing and information processing theme-based redesign of the undergraduate electrical and computer engineering curriculum at Duke University. Advances in Engineering Education. 2010;2(4).
• Ybarra GA, Collins LM, Huettel LG, Massoud HZ, Board JA, Brooke M, et al. Integrating sensing and information processing in an electrical and computer engineering undergraduate curriculum. In: Proceedings - Frontiers in Education Conference, FIE. 2009.
• Oliver LD, Chakrabarty K, Massoud HZ. Dual-threshold pass-transistor logic design. Proceedings of the ACM Great Lakes Symposium on VLSI, GLSVLSI. 2009 Nov 6;291–6.
• Coonley K, Brooke M, Ethier P, Massoud H. Design of a flexible RF data link and associated laboratory curriculum in a first analog electronics and devices course. ASEE Annual Conference and Exposition, Conference Proceedings. 2009 Sep 1;
• Coonley K, Brooke M, Ethier P, Massoud H. Design of a flexible RF data link and associated laboratory curriculum in a first analog electronics and devices course. In: ASEE Annual Conference and Exposition, Conference Proceedings. 2009.
• Cheng C, Lee JH, Massoud HZ, Liu QH. 3-D self-consistent Schrödinger-Poisson solver: The spectral element method. Journal of Computational Electronics. 2008 Feb 15;7(3):337–41.
• Cheng C, Lee J-H, Lim KH, Massoud HZ, Liu QH. 3-D Quantum Transport Solver Based on the Perfectly Matched Layer and Spectral Element Methods for the Simulation of Semiconductor Nanodevices. Journal of computational physics. 2007 Nov;227(1):455–71.
• Cheng C, Lee J, Lim KH, Massoud HZ, Liu QH. Solution of the 3-D schrödinger equation with tensor effective mass based on perfectly matched layer and spectral element methods. Proceedings of SPIE - The International Society for Optical Engineering. 2007 May 23;6468.
• Brown A, Ybarra G, Massoud H, Board J, Holmes J, Coonley K, et al. Redesign of the core curriculum at Duke University. In: ASEE Annual Conference and Exposition, Conference Proceedings. 2006.
• Shen MYC, Jopling J, Massoud HZ. On the effects of carrier tunneling on the capacitance-voltage characteristics of ultrathin-oxide MOSFETs. ECS Transactions. 2006 Jan 1;1(1):283–94.
• Brown A, Ybarra G, Massoud H, Board J, Holmes J, Coonley K, et al. Redesign of the core curriculum at Duke University. In: ASEE Annual Conference and Exposition, Conference Proceedings. 2006.
• Oliver LD, Chakrabarty K, Massoud HZ. An evaluation of the impact of gate oxide tunneling on dual-V t-based leakage reduction techniques. Proceedings of the ACM Great Lakes Symposium on VLSI, GLSVLSI. 2006 Jan 1;2006:105–10.
• Massoud HZ, Pratt ET. Growth kinetics and electrical properties of ultrathin silicon-dioxide layers. ECS Transactions. 2006 Jan 1;2(2):189–203.
• Massoud HZ, Stathis JH, Hattori T, Misra D, Baumvol I. ECS Transactions: Preface. ECS Transactions. 2006 Jan 1;1(1).
• Collins LM, Huettel LG, Brown AS, Ybarra GA, Holmes JS, Board JA, et al. Theme-based redesign of the duke university ECE curriculum: The first steps. In: ASEE Annual Conference and Exposition, Conference Proceedings. 2005. p. 14313–26.
• Huettel L, Brown A, Gustafson M, Massoud H, Ybarra G, Collins L. Work in progress: Theme-based redesign of an electrical and computer engineering curriculum. In: Proceedings - Frontiers in Education Conference, FIE. 2004.
• Cheng C, Liu QH, Massoud HZ. Spectral element method for the schrödinger-poisson system. 2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts. 2004 Dec 1;221–2.
• Cheng C, Liu QH, Lee JH, Massoud HZ. Spectral element method for the Schrödinger-Poisson system. Journal of Computational Electronics. 2004 Oct 1;3(3–4):417–21.
• Liu QH, Cheng C, Massoud HZ. The spectral grid method: A novel fast Schrödinger-equation solver for semiconductor nanodevice simulation. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 2004 Aug 1;23(8):1200–8.
• Przewlocki HM, Kudla A, Brzezinska D, Massoud HZ. Distribution of the contact-potential difference local values over the gate area of MOS structures. Microelectronic Engineering. 2004 Apr 1;72(1–4):165–73.
• Przewlocki HM, Kudla A, Brzezinska D, Borowicz L, Sawicki Z, Massoud HZ. The lateral distribution of the effective contact potential difference over the gate area of MOS structures. Electron Technology. 2004 Jan 5;35.
• Massoud HZ, Przewlocki HM. Effects of stress annealing in nitrogen on the index of refraction of silicon dioxide layers in metal-oxide-semiconductor devices. Journal of Applied Physics. 2002 Aug 15;92(4):2202–6.
• Przewlocki HM, Massoud HZ. Effects of stress annealing in nitrogen on the effective contact-potential difference, charges, and traps at the Si/SiO 2 interface of metal-oxide-semiconductor devices. Journal of Applied Physics. 2002 Aug 15;92(4):2198–201.
• Niimi H, Johnson RS, Lucovsky G, Massoud HZ. Electrical performance of stacked high-k gate dielectrics:: Remote plasma CVD Ta₂O₅ and (Ta₂O₅)_x(SiO₂)_1-x alloys with ultrathin plasma processed SiO₂ interface layers. In: PHYSICS AND CHEMISTRY OF SIO2 AND THE SI-SIO2 INTERFACE - 4. 2000. p. 487–94.
• Shanware A, Shiely JP, Massoud HZ, Vogel E, Henson K, Srivastava A, et al. Extraction of the gate oxide thickness of N- and P-channel MOSFETs below 20 angstrom from the substrate current resulting from valence-band electron tunneling. Technical Digest - International Electron Devices Meeting. 1999 Dec 1;815–8.
• Vasudevan N, Massoud HZ, Fair RB. Thermal model for the initiation of programming in metal-to-metal amorphous-silicon antifuses. Journal of the Electrochemical Society. 1999 Apr 1;146(4):1536–9.
• Massoud HZ, Shiely JP, Shanware A. Self-consistent mosfet tunneling simulations-trends in the gate and substrate currents and the drain-current turnaround effect with oxide scaling. Materials Research Society Symposium - Proceedings. 1999 Jan 1;567:227–39.
• Shanware A, Massoud HZ, Acker A, Li VZQ, Mirabedini MR, Henson K, et al. Modeling the dependence of the gate current on Ge content in ultrathin gate dielectric PMOS devices with POLY-Si1Gex gate material. Materials Research Society Symposium - Proceedings. 1999 Jan 1;567:127–33.
• Shanware A, Massoud HZ, Vogel E, Henson K, Hauser JR, Wortman JJ. Modeling the trends in valence-band electron tunneling in NMOSFETs with ultrathin SiO2 and SiO2/Ta2O5 dielectrics with oxide scaling. Microelectronic Engineering. 1999 Jan 1;48(1):295–8.
• Shanware A, Massoud HZ, Vogel E, Henson K, Hauser JR, Wortman JJ. Comparison of valence-band tunneling in pure sio₂, composite sio₂/ta₂o₅, and pure ta₂o₅, in mosfets with 1.0 nm-thick sio₂-equivalent gate dielectrics. Materials Research Society Symposium - Proceedings. 1999;567:515–20.
• Shanware A, Massoud HZ, Acker A, Li VZQ, Mirabedini MR, Henson K, et al. Effects of Ge content in poly-Si1-xGex gate material on the tunneling barrier in PMOS devices. Microelectronic Engineering. 1999 Jan 1;48(1):39–42.
• Shiely JP, Massoud HZ. Simulation of the drain-current characteristics of MOSFETs with ultrathin oxides in the presence of direct tunneling. Microelectronic Engineering. 1999 Jan 1;48(1):101–4.
• Shanware A, Massoud HZ, Vogel E, Henson K, Hauser JR, Wortman JJ. Comparison of valence-band tunneling in pure sio2, composite sio2/ta2o5, and pure ta2o5, in mosfets with 1.0 nm-thick sio2-equivalent gate dielectrics. In: Materials Research Society Symposium - Proceedings. 1999. p. 515–20.
• Vasudevan N, Fair RB, Massoud HZ, Zhao T, Look K, Karpovich Y, et al. ON-state reliability of amorphous-silicon antifuses. Journal of Applied Physics. 1998 Dec 1;84(11):6440–7.
• Vasudevan N, Fair RB, Massoud HZ. Energy considerations during the growth of a molten filament in metal-to-metal amorphous-silicon antifuses. Journal of Applied Physics. 1998 Nov 1;84(9):4979–83.
• Lucovsky G, Yang H, Massoud HZ. Heterointerface dipoles: Applications to (a) Si-SiO2, (b) nitrided Si-N-SiO2, and (c) SiC-SiO2 interfaces. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1998 Jul 1;16(4):2191–8.
• Wu Y, Lucovsky G, Massoud HZ. Improvement of gate dielectric reliability for p+ poly MOS devices using remote PECVD top nitride deposition on thin gate oxides. Annual Proceedings - Reliability Physics (Symposium). 1998 Jan 1;70–5.
• Lucovsky G, Yang H, Massoud HZ. Heterointerface dipoles: Applications to (a) Si-SiO₂, (b) nitrided Si-N-SiO₂, and (c) SiC-SiO₂ interfaces. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1998;16(4):2191–8.
• Massoud HZ, Ishitani A. Dielectrics, interfaces, and epitaxy. In: Huff HR, Tsuya H, Gosele U, editors. SILICON MATERIALS SCIENCE AND TECHNOLOGY, VOLS 1 AND 2. ELECTROCHEMICAL SOCIETY INC; 1998. p. 727–9.
• Massoud HZ. A simple model of the chemical nature of bonds at the Si-SiO2 interface and its influence on the electronic properties of MOS devices. In: Garfunkel E, Gusev E, Vul A, editors. FUNDAMENTAL ASPECTS OF ULTRATHIN DIELECTRICS ON SI-BASED DEVICES. SPRINGER; 1998. p. 103–16.
• Mirabedini MR, Goodwin-Johansson SH, Massoud HZ. Submicrometre elevated source and drain MOSFET technology using E-beam evaporated silicon. Electronics Letters. 1997 Jun 19;33(13):1183–4.
• Massoud HZ. Device physics and simulation of metal/ferroelectric-film/p-type silicon capacitors. Microelectronic Engineering. 1997 Jan 1;36(1–4):95–8.
• Massoud HZ, Shiely JP. The role of substrate carrier generation in determining the electric field in the oxide of MOS capacitors biased in the Fowler-Norheim tunneling regime. Microelectronic Engineering. 1997 Jan 1;36(1–4):263–6.
• Massoud HZ. Thermal oxidation of silicon in the ultrathin regime. Solid-State Electronics. 1997 Jan 1;41(7):929–34.
• Massoud HZ. Ellipsometry-based process monitoring and control for ultrathin gate dielectrics. In: Deen MJ, Brown WD, Sundaram KB, Raider SI, editors. PROCEEDINGS OF THE SYMPOSIUM ON SILICON NITRIDE AND SILICON DIOXIDE THIN INSULATING FILMS. ELECTROCHEMICAL SOCIETY INC; 1997. p. 208–16.
• Thees HJ, Osburn CM, Shiely JP, Massoud HZ. Wear-out and stress-induced leakage current of ultrathin gate oxides. In: PHYSICS AND CHEMISTRY OF SIO(2) AND THE SI-SIO(2) INTERFACE-3, 1996. 1996. p. 677–86.
• Conrad KA, Sampson RK, Massoud HZ, Irene EA. Design and construction of a rapid thermal processing system for in situ optical measurements. Review of Scientific Instruments. 1996 Jan 1;67(11):3954–7.
• Massoud HZ. The onset of the thermal oxidation of silicon from room temperature to 1000°C. Microelectronic Engineering. 1995 Jan 1;28(1–4):109–16.
• Mirabedini MR, Goodwin-Johansson SH, Massoud HZ. New properties and applications of electron-beam evaporated silicon in submicron elevated source/drain metal-oxide-semiconductor field-effect transistors. Applied Physics Letters. 1994 Dec 1;65(6):728–30.
• Sampson RK, Conrad KA, Massoud HZ. Substrate Doping and Microroughness Effects in RTP Temperature Measurement by in Situ Ellipsometry. Journal of the Electrochemical Society. 1994 Jan 1;141(3):737–41.
• Mirabedini RR, Goodwin-Johansson SH, Massoud HZ, Fair RB. Subquarter-mícrometre elevated source-and-drain MOSFET structure using polysilicon spacers. Electronics Letters. 1994 Jan 1;30(19):1631–2.
• Sampson RK, Conrad KA, Massoud HZ, Irene EA. Wavelength Considerations for Improved Silicon Wafer Temperature Measurement by Ellipsometry. Journal of the Electrochemical Society. 1994 Jan 1;141(2):539–42.
• Neuman MR, Fair RB, Mehragany M, Massoud HZ. Microelectromechanical systems: a new technology for biomedical applications. Proceedings of the Annual Conference on Engineering in Medicine and Biology. 1993 Dec 1;15(pt 3):1545–6.
• Conrad KA, Sampson RK, Massoud HZ, Irene EA. Ellipsometric monitoring and control of the rapid thermal oxidation of silicon. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena. 1993 Nov 1;11(6):2096–101.
• Sampson RK, Massoud HZ. Resolution of Silicon Wafer Temperature Measurement by in Situ Ellipsometry in a Rapid Thermal Processor. Journal of the Electrochemical Society. 1993 Jan 1;140(9):2673–8.
• MASSOUD HZ, RAIDER SI. DEPOSITION AND PROPERTIES OF SIO2 - INTRODUCTION. In: Helms CR, Deal BE, editors. PHYSICS AND CHEMISTRY OF SIO2 AND THE SI-SI0-2 INTERFACE 2. PLENUM PRESS DIV PLENUM PUBLISHING CORP; 1993. p. 117–8.
• Sampson RK, Massoud HZ. Simultaneous Silicon Wafer Temperature and Oxide Film Thickness Measurement in Rapid-Thermal Processing Using Eilipsometry. Journal of the Electrochemical Society. 1993 Jan 1;140(6):1734–43.
• Mastrototaro JJ, Massoud HZ, Pilkington TC, Ideker RE. Rigid and flexible thin-film multielectrode arrays for transmural cardiac recording. IEEE transactions on bio-medical engineering. 1992 Mar;39(3):271–9.
• Mitani K, Massoud HZ. C-V measurement and simulation of silicon-insulator-silicon (SIS) structures for analyzing charges in buried oxides of bonded SOI materials. IEICE Trans Electron (Japan). 1992;E75-C(12):1421–9.
• Deaton R, Massoud HZ. Manufacturability of Rapid-Thermal Oxidation of Silicon: Oxide Thickness, Oxide Thickness Variation, and System Dependency. IEEE Transactions on Semiconductor Manufacturing. 1992 Jan 1;5(4):347–58.
• Goodwin-Johansson SH, Ray M, Kim Y, Massoud HZ. Reconstructed two-dimensional doping profiles from multiple one-dimensional secondary ion mass spectrometry measurements. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena. 1992 Jan 1;10(1):369–79.
• MITANI K, MASSOUD HZ. C-V MEASUREMENT AND SIMULATION OF SILICON-INSULATOR-SILICON (SIS) STRUCTURES FOR ANALYZING CHARGES IN BURIED OXIDES OF BONDED SOI MATERIALS. IEICE TRANSACTIONS ON ELECTRONICS. 1992;E75C(12):1421–9.
• Tsuei TW, Henderson RH, Massoud HZ. Optimum preparation and storage of Ag/Cl and Pt black microelectrodes for transmural cardiac recording applications. Proceedings of the Annual Conference on Engineering in Medicine and Biology. 1991 Dec 1;13(pt 4):1585–6.
• Deaton R, Massoud HZ. Effect of thermally induced stresses on the rapid-thermal oxidation of silicon. Journal of Applied Physics. 1991 Dec 1;70(7):3588–92.
• Massoud HZ, Rogers WB. Determination of the Kinetic Coefficients of Silicon Self-Interstitials from Oxygen Precipitation/Front-Surface Stacking-Fault Growth Experiments. Journal of the Electrochemical Society. 1991 Jan 1;138(11):3492–8.
• Kim Y, Tan TY, Massoud HZ, Fair RB. Modeling the enhanced diffusion of implanted boron in silicon. Proceedings - The Electrochemical Society. 1991 Jan 1;91(4):304–20.
• Massoud HZ, Rogers WB. Determination of the Kinetic Coefficients of Silicon Self-Interstitials from Back-Side Oxidation/Front-Surface Stacking-Fault Growth Experiments. Journal of the Electrochemical Society. 1991 Jan 1;138(11):3483–91.
• Kim Y, Massoud HZ, Goesele UM, Fair RB. Physical modeling of the time constant of transient enhancement in the diffusion of ion-implanted dopants in silicon. Proceedings - The Electrochemical Society. 1991 Jan 1;91(4):254–72.
• Mitani K, Lehmann V, Stengl R, Feijoo D, Gosele UM, Massoud HZ. Causes and prevention of temperature-dependent bubbles in silicon wafer bonding. Japanese Journal of Applied Physics. 1991 Jan 1;30(4):615–22.
• Boyd Rogers W, Massoud HZ. Characterization and modeling of the role of silicon self-interstitials (SiI) in stacking-fault growth. I.SiI injection by backside oxidation. Proceedings - The Electrochemical Society. 1991 Jan 1;91(4):474–94.
• Boyd Rogers W, Massoud HZ. Characterization and modeling of the role of silicon self-interstitials (SiI) in stacking-fault growth. II. SiI injection by oxygen precipitation. Proceedings - The Electrochemical Society. 1991 Jan 1;91(4):495–515.
• DEATON R, MASSOUD HZ. RESPONSE-SURFACE ANALYSIS OF THE RAPID THERMAL-OXIDATION OF SILICON. In: RAPID THERMAL AND INTEGRATED PROCESSING. 1991. p. 373–8.
• Massoud HZ, Sampson RK, Conrad KA, Hu Y-Z, Irene EA. Applications of In Situ Ellipsometry in RTP Temperature Measurement and Process Control. In: MRS Proceedings. Springer Science and Business Media LLC; 1991.
• Massoud HZ. Silicon oxidation kinetics in the thin-film regime. Conference on Solid State Devices and Materials. 1990 Dec 1;1083–6.
• Ash B, Massoud HZ, Nagle HT, Wortman JJ. Electrode fabrication. Proceedings of the Annual Conference on Engineering in Medicine and Biology. 1990 Dec 1;(pt 2):681–4.
• Vitkavage SC, Irene EA, Massoud HZ. An investigation of Si-SiO2 interface charges in thermally oxidized (100), (110), (111), and (511) silicon. Journal of Applied Physics. 1990 Dec 1;68(10):5262–72.
• Ward RR, Massoud HZ, Fair RB. Thermal oxidation of heavily doped silicon in the thin-film regime. Dopant behavior and modeling growth kinetics. Proceedings - The Electrochemical Society. 1990 Dec 1;90(7):405–16.
• Kim Y, Massoud HZ, Chevacharoeukul S, Fair RB. Role of end-of-range dislocation loops as a diffusion barrier. Proceedings - The Electrochemical Society. 1990 Dec 1;90(7):437–46.
• Subrahmanyan R, Massoud HZ, Fair RB. Comparison of Measured and Simulated Two-Dimensional Phosphorus Diffusion Profiles in Silicon. Journal of the Electrochemical Society. 1990 Jan 1;137(5):1573–9.
• Kim Y, Massoud HZ, Fair RB. The Effect of Annealing Ambient on Dopant Diffusion in Silicon during Low-Temperature Processing. Journal of the Electrochemical Society. 1990 Jan 1;137(8):2599–603.
• Rogers WB, Massoud HZ, Fair RB, Gösele UM, Tan TY, Rozgonyi GA. The role of silicon self-interstitial supersaturation in the retardation of oxygen precipitation in Czochralski silicon. Journal of Applied Physics. 1989 Dec 1;65(11):4215–9.
• Rogers WB, Massoud HZ. Transfer of patterns from the backside of a silicon wafer coated with Si3N4 to its front surface during wet oxidation. Applied Physics Letters. 1989 Dec 1;55(2):159–61.
• Mastrototaro JJ, Pilkington TC, Ideker RE, Massoud HZ. Thin-film flexible multielectrode arrays for voltage measurements in the heart. Annual International Conference of the IEEE Engineering in Medicine and Biology - Proceedings. 1989 Nov 1;11 pt 1:212.
• Kim Y, Massoud HZ, Fair RB. The effect of ion-implantation damage on dopant diffusion in silicon during shallow-junction formation. Journal of Electronic Materials. 1989 Mar 1;18(2):143–50.
• Subrahmanyan R, Massoud HZ, Fair RB. Accurate junction-depth measurements using chemical staining. ASTM Special Technical Publication. 1989;(990):126.
• Goodwin-Johansson SH, Subrahmanyan R, Floyd CE, Massoud HZ. Two-Dimensional Impurity Profiling with Emission Computed Tomography Techniques. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 1989 Jan 1;8(4):323–35.
• Massoud HZ. Charge-transfer dipole moments at the Si-SiO2 interface. Journal of Applied Physics. 1988 Dec 1;63(6):2000–5.
• Massoud HZ. Reverse dopant redistribution during the initial stages of the oxidation of heavily doped silicon in dry oxygen. Applied Physics Letters. 1988 Dec 1;53(6):497–9.
• Mastrototaro JJ, Pilkington TC, Ideker RE, Massoud HZ. Thin-film multielectrode arrays for potential gradient measurements in the heart. IEEE/Engineering in Medicine and Biology Society Annual Conference. 1988 Nov 1;10(pt 1):90.
• KIM Y, FAIR RB, MASSOUD HZ. ON THE ROLE OF ION-IMPLANTATION DAMAGE IN SILICON ON DOPANT DIFFUSION FOR SHALLOW JUNCTION FORMATION. JOURNAL OF ELECTRONIC MATERIALS. 1988 Jul 1;17(4):S26–S26.
• MASSOUD HZ, PLUMMER JD. A PHYSICAL MODEL FOR THE OBSERVED DEPENDENCE OF THE METAL-SEMICONDUCTOR WORKFUNCTION DIFFERENCE ON SUBSTRATE ORIENTATION. JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 1988 Mar 1;135(3):C136–C136.
• Subrahmanyan R, Massoud HZ, Fair RB. Experimental characterization of two-dimensional dopant profiles in silicon using chemical staining. Applied Physics Letters. 1988 Jan 1;52(25):2145–7.
• De Lyon TJ, Casey HC, Massoud HZ, Timmons ML, Hutchby JA, Dietrich HB. Influence of rapid thermal annealing temperature on the electrical properties of Be-implanted GaAs p-n junctions. Applied Physics Letters. 1988 Jan 1;52(26):2244–6.
• Kim Y, Massoud HZ, Fair RB. Boron profile changes during low-temperature annealing of BF ⁺2-implanted silicon. Applied Physics Letters. 1988 Jan 1;53(22):2197–9.
• Massoud HZ, Plummer JD. Analytical relationship for the oxidation of silicon in dry oxygen in the thin-film regime. Journal of Applied Physics. 1987 Dec 1;62(8):3416–23.
• Subrahmanyan R, Massoud HZ, Fair RB. The influence of HCl on the oxidation-enhanced diffusion of boron and arsenic in silicon. Journal of Applied Physics. 1987 Dec 1;61(10):4804–7.
• SUBRAHMANYAN R, MASSOUD HZ, FAIR RB. MEASUREMENT OF TWO-DIMENSIONAL DIFFUSION PROFILES. JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 1987 Aug 1;134(8B):C451–C451.
• SUBRAHMANYAN R, MASSOUD HZ, FAIR RB. CHARACTERIZATION AND MODELING OF THE DIFFUSION OF BORON AND ARSENIC IN SI IN DRY O2/HCL MIXTURES. JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 1987 Mar 1;134(3):C124–5.
• ROGERS B, MASSOUD HZ, FAIR RB, GOSELE UM, SHAW R, KORB H, et al. POINT-DEFECT KINETICS DURING BACK SIDE OXIDATION MEASURED BY FRONT SIDE STACKING-FAULT GROWTH. JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 1987 Mar 1;134(3):C125–C125.
• Mastrototaro JJ, Massoud HZ, Pilkington TC, Ideker RE. VLSI APPROACH FOR CARDIAC MULTIELECTRODE PROBE FABRICATION. IEEE/Engineering in Medicine and Biology Society Annual Conference. 1986 Dec 1;1603–5.
• Irene EA, Massoud HZ, Tierney E. SILICON OXIDATION STUDIES: SILICON ORIENTATION EFFECTS ON THERMAL OXIDATION. Journal of the Electrochemical Society. 1986;133(6):1253–6.
• Manda ML, Shepard ML, Fair RB, Massoud HZ. STRESS-ASSISTED DIFFUSION OF BORON AND ARSENIC IN SILICON. Materials Research Society Symposia Proceedings. 1985 Dec 1;36:71–6.
• Massoud HZ, Plummer JD, Irene EA. Thermal Oxidation of Silicon in Dry Oxygen Growth-Rate Enhancement in the Thin Regime I. Experimental Results. Journal of the Electrochemical Society. 1985 Jan 1;132(11):2685–93.
• Massoud HZ. Thermal Oxidation of Silicon in Dry Oxygen Accurate Determination of the Kinetic Rate Constants. Journal of the Electrochemical Society. 1985 Jan 1;132(7):1745–53.
• Massoud HZ, Plummer JD, Irene EA. Thermal Oxidation of Silicon in Dry Oxygen: Growth-Rate Enhancement in the Thin Regime II. Physical Mechanisms. Journal of the Electrochemical Society. 1985 Jan 1;132(11):2693–700.
• Wilson WB, Massoud HZ, Swanson EJ, George RT, Fair RB. Measurement and Modeling of Charge Feedthrough in n-Channel MOS Analog Switches. IEEE Journal of Solid-State Circuits. 1985 Jan 1;20(6):1206–13.
• Wilson WB, Massoud HZ, Swanson EJ, Jr RTG, Fair RB. MEASUREMENT AND MODELING OF CHARGE FEEDTHROUGH IN N-CHANNEL MOS ANALOG SWITCHES. IEEE Journal of Solid-State Circuits. 1985;SC-20(6):1206–13.
• Young DR, Irene EA, DiMaria DJ, De Keersmaecker RF, Massoud HZ. Electron trapping in SiO2 at 295 and 77 °K. Journal of Applied Physics. 1979 Dec 1;50(10):6366–72.
• YOUNG DR, IRENE EA, DIMARIA DJ, MASSOUD HZ, DEKEERSMAECKER RF. EFFECTS OF HEAT-TREATMENT ON ELECTRON TRAPPING CHARACTERISTICS OF SIO2 AT 300-DEGREES-K AND 77-DEGREES-K. JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 1978;125(3):C127–C127.