Steven Noyce

Education

• B.S. Brigham Young University, 2015
• Ph.D. Duke University, 2020
• M.S. Duke University, 2020

Positions

• Adjunct Assistant Professor in the Department of Electrical and Computer Engineering

Courses Taught

• ECE 651: Software Engineering

Publications

• Albarghouthi FM, Semeniak D, Khanani I, Doherty JL, Smith BN, Salfity M, et al. Addressing Signal Drift and Screening for Detection of Biomarkers with Carbon Nanotube Transistors. ACS nano. 2024 Feb;
• Williams NX, Carroll B, Noyce SG, Hobbie HA, Joh DY, Rogers JG, et al. Fully printed prothrombin time sensor for point-of-care testing. Biosens Bioelectron. 2021 Jan 15;172:112770.
• Noyce SG, Doherty JL, Zauscher S, Franklin AD. Understanding and Mapping Sensitivity in MoS₂ Field-Effect-Transistor-Based Sensors. ACS nano. 2020 Sep;14(9):11637–47.
• Doherty JL, Noyce SG, Cheng Z, Abuzaid H, Franklin AD. Capping Layers to Improve the Electrical Stress Stability of MoS₂ Transistors. ACS applied materials & interfaces. 2020 Aug;12(31):35698–706.
• Cardenas JA, Andrews JB, Noyce SG, Franklin AD. Carbon nanotube electronics for IoT sensors. Nano Futures. 2020 Jan 1;4(1).
• Cheng Z, Yu Y, Singh S, Price K, Noyce SG, Lin Y-C, et al. Immunity to Contact Scaling in MoS₂ Transistors Using in Situ Edge Contacts. Nano letters. 2019 Aug;19(8):5077–85.
• Williams NX, Noyce S, Cardenas JA, Catenacci M, Wiley BJ, Franklin AD. Silver nanowire inks for direct-write electronic tattoo applications. Nanoscale. 2019 Aug;11(30):14294–302.
• Cheng Z, Abuzaid H, Yu Y, Zhang F, Li Y, Noyce SG, et al. Convergent ion beam alteration of 2D materials and metal-2D interfaces. 2D Materials. 2019 Jun 6;6(3).
• Noyce SG, Doherty JL, Cheng Z, Han H, Bowen S, Franklin AD. Electronic Stability of Carbon Nanotube Transistors Under Long-Term Bias Stress. Nano letters. 2019 Mar;19(3):1460–6.
• Noyce SG, Vanfleet RR, Craighead HG, Davis RC. High surface-area carbon microcantilevers. Nanoscale advances. 2019 Mar;1(3):1148–54.
• Lin YC, McGuire F, Noyce S, Williams N, Cheng Z, Andrews J, et al. Effects of Gate Stack Composition and Thickness in 2-D Negative Capacitance FETs. IEEE Journal of the Electron Devices Society. 2019 Jan 1;7:645–9.
• Andrews JB, Cardenas JA, Lim CJ, Noyce SG, Mullett J, Franklin AD. Fully Printed and Flexible Carbon Nanotube Transistors for Pressure Sensing in Automobile Tires. IEEE Sensors Journal. 2018 Oct 1;18(19):7875–80.
• Noyce SG, Doherty JL, Franklin AD. Bias stress stability of carbon nanotube transistors with implications for sensors. In: Device Research Conference - Conference Digest, DRC. 2018.
• Barrett LK, Barton DJ, Noyce SG, Allred DD, Vanfleet RR, Davis RC. High-Aspect-Ratio Metal Microfabrication by Nickel Electroplating of Patterned Carbon Nanotube Forests. Journal of Microelectromechanical Systems. 2015 Oct 1;24(5):1331–7.